Samsung to produce 20nm flash memory

24th April, 2010 by adina
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Samsung has begun to produce 20 nanometer NAND flash memory by using a technology that is much denser than 30nm, significantly much faster and allowing more storage in the same space. The company estimates that an SDHC card with GB of memory should be about 30 percent faster. It should guarantee Class 10, which means 10MB per second write speed and 20MB per second read speed.

The technology will use 32 gigabit chips (4GB) that can be combined to make capacities up to 64GB. Samsung expects these cards to be used either as memory cards or as embedded memory in devices like smartphones. Although current production is dedicated only to samples for companies needing to use the extra storage, mass production is scheduled to start later this year.


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